TK14C65W5,S1Q
MOSFET N-CH 650V 13.7A I2PAKManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage DTMOSIV series TK14C65W5-S1Q is an N-Channel power MOSFET designed for high-voltage applications. This component features a 650V drain-to-source breakdown voltage and a continuous drain current of 13.7A at 25°C (Ta). The device offers a low on-resistance of 300mOhm maximum at 6.9A and 10V Vgs, with a gate charge of 40nC maximum at 10V Vgs. Its input capacitance (Ciss) is rated at 1300pF maximum at 300V Vds. The TK14C65W5-S1Q is housed in an I2PAK (TO-262-3 Long Leads, TO-262AA) package for through-hole mounting. It supports a maximum junction temperature of 150°C and a maximum power dissipation of 130W (Tc). This device is suitable for use in power supply units, power factor correction circuits, and industrial motor control applications.
Additional Information
Series: DTMOSIVRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 6.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 690µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 300 V |
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