TK14C65W,S1Q
MOSFET N-CH 650V 13.7A I2PAKManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TK14C65W-S1Q is an N-Channel DTMOSIV series power MOSFET. This component features a maximum drain-source voltage (Vdss) of 650V and a continuous drain current (Id) of 13.7A at 25°C. The device offers a low on-resistance (Rds On) of 250mOhm maximum at 6.9A and 10V Vgs. With a gate charge (Qg) of 35nC maximum at 10V and input capacitance (Ciss) of 1300pF maximum at 300V, it is suitable for demanding applications. The maximum power dissipation is 130W (Tc). The TK14C65W-S1Q is housed in an I2PAK package for through-hole mounting and operates at junction temperatures up to 150°C. This device is commonly employed in power supply units and industrial motor control applications.
Additional Information
Series: DTMOSIVRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 6.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 690µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 300 V |
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