TK13A65U(STA4,Q,M)
MOSFET N-CH 650V 13A TO220SISManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage introduces the TK13A65U-STA4-Q-M-, an N-Channel MOSFET from the DTMOSII series. This through-hole component features a Drain-Source Voltage (Vdss) of 650V and a continuous drain current (Id) of 13A at 25°C. With a maximum power dissipation of 40W (Tc), it is suitable for demanding applications. The device exhibits a typical Rds On of 380mOhm at 6.5A and 10V, with a gate charge (Qg) of 17nC at 10V and input capacitance (Ciss) of 950pF at 10V. Operating at junction temperatures up to 150°C, this MOSFET is housed in a TO-220SIS package. Key applications include high-voltage power supplies and switching power applications across various industries.
Additional Information
Series: DTMOSIIRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-220SIS |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 10 V |
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