TK13A60D(STA4,Q,M)
MOSFET N-CH 600V 13A TO220SISManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage presents the TK13A60D-STA4-Q-M, an N-Channel MOSFET from the À-MOSVII series. This component features a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 13A at 25°C (Ta). The device offers a maximum on-resistance (Rds On) of 430mOhm at 6.5A and 10V gate-source voltage. With a maximum power dissipation of 50W (Tc) and an operating junction temperature of 150°C, it is suited for demanding applications. The TK13A60D-STA4-Q-M is housed in a TO-220SIS package with through-hole mounting. Key parameters include a gate charge (Qg) of 40 nC at 10V and an input capacitance (Ciss) of 2300 pF at 25V. This MOSFET is utilized in power switching and power supply applications across various industrial sectors.
Additional Information
Series: À-MOSVIIRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Rds On (Max) @ Id, Vgs | 430mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220SIS |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 25 V |
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