TK13A45D(STA4,Q,M)
MOSFET N-CH 450V 13A TO220SISManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage TK13A45D-STA4-Q-M- is an N-Channel Power MOSFET from the À-MOSVII series. This through-hole component features a drain-source voltage (Vdss) of 450V and a continuous drain current (Id) of 13A at 25°C (Ta). With a maximum power dissipation of 45W (Tc), it offers a typical Rds(On) of 460mOhm at 6.5A and 10V gate drive. Key parameters include a gate charge (Qg) of 25 nC and an input capacitance (Ciss) of 1350 pF. The device is housed in a TO-220SIS package and operates at junction temperatures up to 150°C. This component is suitable for applications in power supply units and industrial automation.
Additional Information
Series: À-MOSVIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: TubeDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Rds On (Max) @ Id, Vgs | 460mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220SIS |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 450 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 25 V |
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