TK12V60W,LVQ
MOSFET N-CH 600V 11.5A 4DFNManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage DTMOSIV series N-channel power MOSFET, part number TK12V60W-LVQ. This device features a 600V drain-source breakdown voltage and a continuous drain current of 11.5A at 25°C ambient. The TK12V60W-LVQ offers a maximum on-resistance of 300mOhm at 5.8A and 10V gate-source voltage. It is housed in a 4-DFN-EP (8x8) surface mount package with an exposed pad, providing excellent thermal performance with a maximum power dissipation of 104W at 25°C case temperature. Key parameters include a gate charge of 25nC at 10V and input capacitance of 890pF at 300V. Operating temperature range is up to 150°C. This component is suitable for applications in power supply units and industrial motor control.
Additional Information
Series: DTMOSIVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-VSFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 5.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 3.7V @ 600µA |
| Supplier Device Package | 4-DFN-EP (8x8) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 890 pF @ 300 V |
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