TK12P60W,RVQ
MOSFET N CH 600V 11.5A DPAKManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage presents the TK12P60W-RVQ, a DTMOSIV series N-channel power MOSFET designed for high-voltage applications. This surface-mount device features a 600V drain-source breakdown voltage and a continuous drain current of 11.5A at 25°C ambient temperature, with a maximum power dissipation of 100W (Tc). The Rds(On) is specified at 340mOhm maximum at 5.8A and 10V gate-source voltage. Key parameters include a gate charge of 25nC (max) at 10V and input capacitance of 890pF (max) at 300V. The DPAK package (TO-252-3, SC-63) is suitable for automated assembly and is supplied on tape and reel. This component is utilized in power supply units, lighting, and industrial motor drive applications.
Additional Information
Series: DTMOSIVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 340mOhm @ 5.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 3.7V @ 600µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 890 pF @ 300 V |
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