TK12P50W,RQ
PB-F POWER MOSFET TRANSISTOR DPAManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage DTMOSIV series TK12P50W-RQ is an N-Channel Power MOSFET designed for high-voltage applications. This component features a 500V drain-source voltage (Vdss) and a continuous drain current (Id) of 11.5A at 25°C ambient temperature, with a maximum power dissipation of 100W at 25°C case temperature. The device offers a maximum on-resistance (Rds On) of 340mOhm at 5.8A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 25 nC maximum at 10V and input capacitance (Ciss) of 890 pF maximum at 300V. The TK12P50W-RQ utilizes a surface mount DPAK (TO-252-3) package and operates at temperatures up to 150°C. This component is suitable for use in power supply units, lighting, and industrial motor control applications.
Additional Information
Series: DTMOSIVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 340mOhm @ 5.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 3.7V @ 600µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 890 pF @ 300 V |
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