TK12A60U(Q,M)
MOSFET N-CH 600V 12A TO220SISManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TK12A60U-Q-M is a 600V N-Channel DTMOSII series power MOSFET. This through-hole component features a continuous drain current of 12A at 25°C and a maximum power dissipation of 35W at the case temperature. The device exhibits a low on-resistance of 400mOhm at 6A and 10V, with a gate charge of 14nC at 10V. Input capacitance (Ciss) is rated at 720pF at 10V. Designed for operation up to 150°C, this MOSFET is packaged in a TO-220SIS. Applications include power supplies and industrial automation.
Additional Information
Series: DTMOSIIRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-220SIS |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 720 pF @ 10 V |