TK12A50E,S5X
MOSFET N-CH 500V 12A TO220SISManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TK12A50E-S5X is a N-Channel MOSFET designed for power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 500 V and offers a continuous drain current (Id) of 12A at 25°C. The Rds On is specified at a maximum of 520mOhm at 6A and 10V gate-source voltage. With a maximum power dissipation of 45W (Tc), it is housed in a TO-220SIS package suitable for through-hole mounting. Key parameters include a gate charge (Qg) of 40 nC at 10V and input capacitance (Ciss) of 1300 pF at 25V. This device operates up to a junction temperature of 150°C. Applications include power supplies, motor control, and general-purpose switching in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 520mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1.2mA |
| Supplier Device Package | TO-220SIS |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
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