TK125V65Z,LQ
MOSFET N-CH 650V 24A 5DFNManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 650 V 24A (Ta) 190W (Tc) Surface Mount 4-DFN-EP (8x8)
Additional Information
Series: DTMOSVIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-VSFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Ta) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1.02mA |
| Supplier Device Package | 4-DFN-EP (8x8) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2250 pF @ 300 V |
Request a Quote
Clients Also Buy
TK065U65Z,RQ
DTMOS VI TOLL PD=270W F=1MHZ
TK190U65Z,RQ
DTMOS VI TOLL PD=130W F=1MHZ
TK110U65Z,RQ
DTMOS VI TOLL PD=190W F=1MHZ
