TK11P65W,RQ
MOSFET N-CH 650V 11.1A DPAKManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage DTMOSIV series TK11P65W-RQ is an N-channel power MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 650V and a continuous drain current (Id) of 11.1A at 25°C (Ta). The device offers a maximum on-resistance (Rds On) of 440mOhm at 5.5A and 10V. With a maximum power dissipation of 100W (Tc), it is suitable for demanding power conversion and switching applications. The surface mount DPAK package (TO-252-3) facilitates integration into compact designs. Key parameters include a gate charge (Qg) of 25 nC (Max) at 10V and input capacitance (Ciss) of 890 pF (Max) at 300V. Operating temperature range is up to 150°C (TJ). This device is commonly utilized in power supplies, lighting, and industrial motor control.
Additional Information
Series: DTMOSIVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 440mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 450µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 890 pF @ 300 V |
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