TK11A60D(STA4,Q,M)
MOSFET N-CH 600V 11A TO220SISManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Toshiba Semiconductor and Storage TK11A60D-STA4-Q-M- is an N-Channel Power MOSFET from the À-MOSVII series. This component features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 11 A at 25°C (Ta). The device offers a maximum on-resistance (Rds On) of 650 mOhm at 5.5 A, 10 V, with a gate-source voltage (Vgs) of 10 V. Key parameters include a gate charge (Qg) of 28 nC (max) at 10 V and an input capacitance (Ciss) of 1550 pF (max) at 25 V. With a maximum power dissipation of 45 W (Tc), this TO-220SIS packaged device supports through-hole mounting and operates at junction temperatures up to 150°C. This MOSFET is suitable for applications in power supplies and industrial equipment.
Additional Information
Series: À-MOSVIIRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220SIS |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1550 pF @ 25 V |