TK110Z65Z,S1F
POWER MOSFET TRANSISTOR TO-247-4Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage DTMOSVI series N-Channel Power MOSFET featuring a 650 V drain-source voltage. This device, part number TK110Z65Z-S1F, is packaged in a TO-247-4L(T) through-hole configuration. It offers a continuous drain current of 24 A (Ta) at 25°C and a maximum power dissipation of 190 W (Tc). The on-resistance (Rds On) is specified as 110 mOhm at 12 A and 10 V gate-source voltage. Key parameters include a maximum gate charge (Qg) of 40 nC at 10 V and input capacitance (Ciss) up to 2250 pF at 300 V. The operating temperature range extends to 150°C. This component finds application in power supply, industrial, and automotive sectors.
Additional Information
Series: DTMOSVIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Ta) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1.02mA |
| Supplier Device Package | TO-247-4L(T) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2250 pF @ 300 V |
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