TK110N65Z,S1F
POWER MOSFET TRANSISTOR TO-247(OManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage DTMOSVI series N-Channel Power MOSFET, part number TK110N65Z-S1F. This device features a drain-source voltage (Vdss) of 650 V and a continuous drain current (Id) of 24 A at 25°C (Ta). The on-resistance (Rds On) is rated at a maximum of 110 mOhm at 12 A, 10 V. With a gate charge (Qg) of 40 nC at 10 V and input capacitance (Ciss) of 2250 pF at 300 V, this MOSFET is suitable for high-voltage applications. It offers a maximum power dissipation of 190W (Tc) and operates within a temperature range of 150°C. The TK110N65Z-S1F is housed in a TO-247-3 package, utilizing a through-hole mounting type. This component is commonly found in power supply units, high-voltage switching applications, and industrial power conversion systems.
Additional Information
Series: DTMOSVIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Ta) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1.02mA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2250 pF @ 300 V |
Request a Quote
Clients Also Buy
TK065U65Z,RQ
DTMOS VI TOLL PD=270W F=1MHZ
TK190U65Z,RQ
DTMOS VI TOLL PD=130W F=1MHZ
TK110U65Z,RQ
DTMOS VI TOLL PD=190W F=1MHZ
