TK10S04K3L(T6L1,NQ
MOSFET N-CH 40V 10A DPAKManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage TK10S04K3L-T6L1-NQ is an N-Channel MOSFET from the U-MOSIV series. This component features a 40V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 10A at 25°C ambient temperature. With a maximum on-resistance (Rds On) of 28mOhm at 5A and 10V Vgs, it offers efficient power switching. The device is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 (DPAK+) surface mount package, enabling high power dissipation of 25W (Tc). Key electrical characteristics include a gate charge (Qg) of 10 nC (max) at 10V Vgs and input capacitance (Ciss) of 410 pF (max) at 10V Vds. The operating temperature range extends to 175°C (TJ). This MOSFET is suitable for applications in power management, automotive, and industrial sectors.
Additional Information
Series: U-MOSIVRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | DPAK+ |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 410 pF @ 10 V |