TK10A60E,S5X
MOSFET N-CH 600V 10A TO220SISManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage offers the TK10A60E-S5X, an N-channel MOSFET designed for high-voltage applications. This component features a drain-to-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 10 A at 25°C (Ta). The device is housed in a TO-220SIS package, suitable for through-hole mounting. Key electrical parameters include a maximum on-resistance (Rds On) of 750 mOhm at 5 A and 10 V, a gate charge (Qg) of 40 nC at 10 V, and an input capacitance (Ciss) of 1300 pF at 25 V. The maximum power dissipation is 45 W (Tc). This MOSFET operates efficiently across a wide temperature range, up to 150°C (TJ). It finds application in power supply units, industrial automation, and consumer electronics.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220SIS |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
Request a Quote
Clients Also Buy
SSM3K15AFU,LF
MOSFET N-CH 30V 100MA USM
TK6R7A10PL,S4X
X35 PB-F POWER MOSFET TRANSISTOR
TK6A53D(STA4,Q,M)
MOSFET N-CH 525V 6A TO220SIS
