TK10A60D(STA4,Q,M)
MOSFET N-CH 600V 10A TO220SISManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage's TK10A60D-STA4-Q-M- is a high-performance N-Channel MOSFET from the À-MOSVII series. This device features a Drain-to-Source Voltage (Vdss) of 600V and a continuous Drain current (Id) of 10A at 25°C. Engineered for demanding applications, it offers a maximum On-Resistance (Rds On) of 750mOhm at 5A and 10V, with a Gate Charge (Qg) of 25nC typical. The input capacitance (Ciss) is rated at 1350pF maximum at 25V. This component supports a maximum power dissipation of 45W (Tc) and operates within a junction temperature range of 150°C. The TK10A60D-STA4-Q-M- is housed in a TO-220SIS package, suitable for through-hole mounting. This MOSFET is commonly utilized in power supply units, lighting, and industrial control systems.
Additional Information
Series: À-MOSVIIRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220SIS |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 25 V |
Request a Quote
Clients Also Buy
TK2Q60D(Q)
MOSFET N-CH 600V 2A PW-MOLD2
TK6P53D(T6RSS-Q)
MOSFET N-CH 525V 6A DPAK
TK7P50D(T6RSS-Q)
MOSFET N-CH 500V 7A DPAK
