TJ60S04M3L(T6L1,NQ
MOSFET P-CH 40V 60A DPAKManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage TJ60S04M3L-T6L1-NQ is a P-Channel MOSFET from the U-MOSVI series. This surface mount component features a 40V drain-source voltage rating and a continuous drain current capability of 60A at 25°C (Ta). The device offers a maximum on-resistance (Rds On) of 6.3mOhm at 30A and 10V Vgs. It supports drive voltages between 6V and 10V and has a maximum gate-source voltage of +10V and -20V. The TJ60S04M3L-T6L1-NQ is housed in a TO-252-3, DPAK+ package and can operate at junction temperatures up to 175°C. Power dissipation is rated at 90W (Tc). This component is suitable for applications within the automotive and industrial sectors.
Additional Information
Series: U-MOSVIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | DPAK+ |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | +10V, -20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 125 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6510 pF @ 10 V |
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