SSM6K211FE,LF
MOSFET N-CH 20V 3.2A ES6Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage SSM6K211FE-LF is an N-Channel MOSFET from the U-MOSIII series. This surface mount device features a 20V drain-source breakdown voltage and a continuous drain current capability of 3.2A at 25°C. It offers a low on-resistance of 47mOhm maximum at 2A, 4.5V gate-source voltage. The ES6 package, also known as SOT-563 or SOT-666, supports efficient thermal management with a maximum power dissipation of 500mW. Key parameters include a gate charge of 10.8 nC maximum at 4.5V, an input capacitance of 510 pF maximum at 10V drain-source voltage, and a threshold voltage of 1V maximum at 1mA. This component is suitable for applications requiring efficient switching and power management in automotive and industrial electronics. It is supplied in a Digi-Reel® package.
Additional Information
Series: U-MOSIIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 47mOhm @ 2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | ES6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 10 V |
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