SSM6K208FE,LF
MOSFET N-CH 30V 1.9A ES6Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage SSM6K208FE-LF is an N-Channel MOSFET designed for surface-mount applications. This component features a Drain-Source Voltage (Vdss) of 30V and can handle a continuous drain current (Id) of 1.9A at 25°C with a maximum power dissipation of 500mW. The Rds On is specified at a maximum of 133mOhm at 1A, 4V, with a gate drive voltage range from 1.8V to 4V. Key electrical characteristics include a gate charge (Qg) of 1.9 nC at 4V and an input capacitance (Ciss) of 123 pF at 15V. The device operates at temperatures up to 150°C and is supplied in an ES6 package (SOT-563, SOT-666) on tape and reel. This MOSFET is suitable for power management and switching applications in various industries.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 133mOhm @ 1A, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | ES6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.9 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 123 pF @ 15 V |
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