SSM6K204FE,LF
MOSFET N-CH 20V 2A ES6Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage presents the SSM6K204FE-LF, an N-Channel MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 2A at 25°C. With a maximum On-Resistance (Rds On) of 126mOhm at 1A and 4V Vgs, it offers efficient switching. The ES6 package, a surface mount SOT-563/SOT-666, supports a maximum power dissipation of 500mW (Ta). Key electrical characteristics include a gate charge (Qg) of 3.4 nC at 10V and input capacitance (Ciss) of 195 pF at 10V. The operating temperature range extends to 150°C, making it suitable for use in automotive and industrial electronic systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 126mOhm @ 1A, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | ES6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 195 pF @ 10 V |
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