SSM6K202FE,LF
MOSFET N-CH 30V 2.3A ES6Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage N-Channel MOSFET, part number SSM6K202FE-LF. This device features a 30V drain-source voltage (Vdss) and a continuous drain current of 2.3A (Ta) at 25°C. The Rds(on) is specified at a maximum of 85mOhm at 1.5A and 4V gate-source voltage. It operates with a gate-source voltage range of ±12V and a threshold voltage (Vgs(th)) of 1V at 1mA. The input capacitance (Ciss) is a maximum of 270pF at 10V. This MOSFET is housed in an ES6 surface mount package, equivalent to SOT-563/SOT-666, with a maximum power dissipation of 500mW (Ta). It is supplied on a tape and reel. Applications include power management and switching circuits in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 1.5A, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | ES6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 10 V |
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