SSM6J808R,LXHF
AUTO AEC-Q SS MOS P-CH LOGIC-LEVManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage presents the SSM6J808R-LXHF, a P-Channel MOSFET designed for automotive applications. This surface mount component features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 7A at 25°C. The device offers a low on-resistance (Rds On) of 35mOhm at 2.5A and 10V, with a gate drive voltage range from 4V to 10V. Key characteristics include a gate charge (Qg) of 24.2 nC maximum at 10V and input capacitance (Ciss) of 1020 pF maximum at 10V. The SSM6J808R-LXHF operates at temperatures up to 150°C and is qualified to AEC-Q101 standards. It is supplied in a 6-TSOP-F package, suitable for high-volume manufacturing. This MOSFET is commonly utilized in automotive power management and switching circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 100µA |
| Supplier Device Package | 6-TSOP-F |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | +10V, -20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 24.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1020 pF @ 10 V |
| Qualification | AEC-Q101 |
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