SSM6J771G,LF
MOSFET P-CH 20V 5A 6WCSPManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage U-MOSVI series P-channel MOSFET, part number SSM6J771G-LF. This device features a 20V drain-source voltage and a continuous drain current capability of 5A at 25°C. The SSM6J771G-LF offers a low on-resistance of 31mOhm maximum at 3A, 8.5V Vgs, with drive voltages specified from 2.5V to 8.5V. Key parameters include a gate charge of 9.8 nC maximum at 4.5V Vgs and an input capacitance of 870 pF maximum at 10V Vds. The device is housed in a 6-UFBGA, WLCSP package suitable for surface mounting and operates at junction temperatures up to 150°C. Power dissipation is rated at 1.2W. This component is utilized in various applications, including power management and battery control systems.
Additional Information
Series: U-MOSVIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UFBGA, WLCSP |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 3A, 8.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.2W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 1mA |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 8.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 10 V |
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