SSM6J53FE(TE85L,F)
MOSFET P-CH 20V 1.8A ES6Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage SSM6J53FE-TE85L-F- is a P-Channel MOSFET designed for surface mount applications. This component features a Drain-to-Source Voltage (Vdss) of 20 V and a continuous Drain current (Id) of 1.8 A at 25°C. The Rds On is specified at a maximum of 136 mOhm at 1 A and 2.5 V Vgs. With a maximum power dissipation of 500 mW (Ta), it is suitable for operation up to 150°C (TJ). The ES6 package, equivalent to SOT-563/SOT-666, is supplied on tape and reel. Key parameters include a Gate Charge (Qg) of 10.6 nC at 4 V and Input Capacitance (Ciss) of 568 pF at 10 V. This MOSFET is utilized in various industries including consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 136mOhm @ 1A, 2.5V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | ES6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 2.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.6 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 568 pF @ 10 V |
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