SSM6J503NU,LF
MOSFET P-CH 20V 6A 6UDFNBManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage presents the SSM6J503NU-LF, a P-Channel MOSFET from the U-MOSVI series. This component features a Drain-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 6A at 25°C. The low on-resistance (Rds On) of 32.4mOhm is achieved at 3A and 4.5V Vgs, with a maximum power dissipation of 1W (Ta). The device is housed in a compact 6-UDFNB (2x2) surface mount package. Key electrical characteristics include a gate charge (Qg) of 12.8 nC (max) at 10V and input capacitance (Ciss) of 840 pF (max) at 10V. The SSM6J503NU-LF is suitable for applications requiring efficient power switching and is commonly utilized in consumer electronics and automotive systems. The operating temperature range extends to 150°C (TJ).
Additional Information
Series: U-MOSVIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 32.4mOhm @ 3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | 6-UDFNB (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 840 pF @ 10 V |
Request a Quote
Clients Also Buy
SSM3J351R,LXHF
AECQ MOSFET PCH -60V -3.5A SOT23
TPN4R712MD,L1Q
MOSFET P-CH 20V 36A 8TSON
TPH1R712MD,L1Q
MOSFET P-CH 20V 60A 8SOP
