SSM6J502NU,LF
MOSFET P-CH 20V 6A 6UDFNBManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage P-Channel MOSFET, SSM6J502NU-LF from the U-MOSVI series. This device features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 6A at 25°C (Ta). With a maximum on-resistance (Rds On) of 23.1mOhm at 4A and 4.5V, it offers efficient power switching. The SSM6J502NU-LF is housed in a compact 6-UDFNB (2x2) surface mount package. Key electrical characteristics include a gate charge (Qg) of 24.8 nC at 4.5V and input capacitance (Ciss) of 1800 pF at 10V. This MOSFET is suitable for applications demanding high current density and low power dissipation, such as power management in consumer electronics and industrial automation. It operates within a temperature range of 150°C (TJ).
Additional Information
Series: U-MOSVIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 23.1mOhm @ 4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | 6-UDFNB (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 24.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 10 V |
Request a Quote
Clients Also Buy
SSM3J351R,LXHF
AECQ MOSFET PCH -60V -3.5A SOT23
TPN4R712MD,L1Q
MOSFET P-CH 20V 36A 8TSON
TPH1R712MD,L1Q
MOSFET P-CH 20V 60A 8SOP
