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SSM6J422TU,LXHF

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SSM6J422TU,LXHF

SMOS P-CH VDSS=-20V, VGSS=+6/-8V

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Toshiba Semiconductor and Storage SSM6J422TU-LXHF is a P-Channel MOSFET from the U-MOSVI series, designed for demanding applications. This component features a 20V Drain-Source Voltage (Vdss) and a continuous drain current capability of 4A at 25°C (Ta). Its low on-resistance of 42.7mOhm at 3A and 4.5V Vgs, coupled with a maximum power dissipation of 1W (Ta), makes it suitable for power management tasks. The UF6 surface mount package, specifically the 6-SMD, Flat Leads configuration, facilitates efficient board integration. Key electrical parameters include a gate charge of 12.8 nC at 4.5V and input capacitance of 840 pF at 10V. With an operating temperature range up to 150°C and AEC-Q101 qualification, this device is engineered for automotive environments. Drive voltage specifications range from 1.5V to 4.5V.

Additional Information

Series: U-MOSVIRoHS Status: unknownManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-SMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature150°C
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Rds On (Max) @ Id, Vgs42.7mOhm @ 3A, 4.5V
FET Feature-
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id1V @ 1mA
Supplier Device PackageUF6
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)+6V, -8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs12.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds840 pF @ 10 V
QualificationAEC-Q101

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