SSM6J409TU(TE85L,F
MOSFET P-CH 20V 9.5A UF6Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage P-Channel MOSFET, part number SSM6J409TU-TE85L-F, is a high-performance component from the U-MOSV series. This device features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 9.5A at 25°C, with a maximum power dissipation of 1W (Ta). The SSM6J409TU-TE85L-F offers a low on-resistance (Rds On) of 22.1mOhm at 3A and 4.5V Vgs, with drive voltages ranging from 1.5V to 4.5V. Key parameters include a gate charge (Qg) of 15 nC at 4.5V Vgs and an input capacitance (Ciss) of 1100 pF at 10V Vds. Manufactured for surface mounting in the UF6 package (6-SMD, Flat Leads), this MOSFET operates within a temperature range of 150°C (TJ). It finds application in power management circuits across various industries.
Additional Information
Series: U-MOSVRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 22.1mOhm @ 3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | UF6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 10 V |
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