SSM5H12TU(TE85L,F)
MOSFET N-CH 30V 1.9A UFVManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage SSM5H12TU-TE85L-F- is an N-Channel MOSFET designed for efficient power switching applications. This U-MOSIII series device features a drain-to-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 1.9 A at 25°C. The Rds On at 1A and 4V Vgs is a maximum of 133 mOhm. The UFV packaged component offers a maximum power dissipation of 500mW (Ta) and is suitable for operation up to 150°C (TJ). Key electrical characteristics include a gate charge (Qg) of 1.9 nC at 4V Vgs and an input capacitance (Ciss) of 123 pF at 15V Vds. The device incorporates an isolated Schottky diode. This MOSFET is commonly utilized in consumer electronics and industrial automation.
Additional Information
Series: U-MOSIIIRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD (5 Leads), Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 133mOhm @ 1A, 4V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | UFV |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.9 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 123 pF @ 15 V |
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