SSM5G10TU(TE85L,F)
MOSFET P-CH 20V 1.5A UFVManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage SSM5G10TU-TE85L-F- is a P-channel MOSFET from the U-MOSIII series. This device features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 1.5A at 25°C. It offers a low on-resistance (Rds On) of 213mOhm maximum at 1A and 4V Vgs. The SSM5G10TU-TE85L-F- is designed for surface mounting within a 6-SMD (5 Leads), Flat Leads package, specifically the UFV supplier device package, and is supplied on tape and reel. Key characteristics include a maximum power dissipation of 500mW (Ta) and an operating junction temperature of 150°C. The device incorporates an isolated Schottky diode and exhibits a gate charge (Qg) of 6.4 nC maximum at 4V Vgs and an input capacitance (Ciss) of 250 pF maximum at 10V Vds. This component is suitable for applications in automotive and industrial sectors.
Additional Information
Series: U-MOSIIIRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD (5 Leads), Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 213mOhm @ 1A, 4V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | UFV |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.4 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 10 V |
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