SSM4K27CTTPL3
MOSFET N-CH 20V 500MA CST4Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage's N-Channel MOSFET, part number SSM4K27CTTPL3, is a U-MOSIII series component designed for high-performance applications. This surface mount device offers a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 500mA at 25°C. The SSM4K27CTTPL3 features a maximum on-resistance (Rds On) of 205mOhm at 250mA and 4V Vgs. With a threshold voltage (Vgs(th)) of 1.1V at 1mA and drive voltages ranging from 1.8V to 4V, precise control is achievable. The component is packaged in a compact CST4 (1.2x0.8) 4-SMD, No Lead configuration, suitable for demanding space constraints. Its 150°C junction temperature rating and 400mW power dissipation make it suitable for use in areas such as consumer electronics and industrial automation. The SSM4K27CTTPL3 is supplied in Tape & Reel packaging.
Additional Information
Series: U-MOSIIIRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 500mA (Ta) |
| Rds On (Max) @ Id, Vgs | 205mOhm @ 250mA, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 400mW (Ta) |
| Vgs(th) (Max) @ Id | 1.1V @ 1mA |
| Supplier Device Package | CST4 (1.2x0.8) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 174 pF @ 10 V |
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