SSM3K7002BS,LF
MOSFET N-CH 60V 200MA S-MINIManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage presents the SSM3K7002BS-LF, an N-Channel MOSFET designed for surface mount applications. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 200mA at 25°C. The Rds On is specified at a maximum of 2.1 Ohms at 500mA and 10V gate-source voltage. With a power dissipation of 200mW (Ta) and an operating junction temperature of 150°C, this MOSFET is suitable for use in general-purpose switching applications across various electronics industries. The S-Mini package, also known as TO-236-3, SC-59, or SOT-23-3, is supplied in tape and reel. Key parameters include a threshold voltage (Vgs(th)) of 2.5V at 250µA and an input capacitance (Ciss) of 17pF at 25V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Rds On (Max) @ Id, Vgs | 2.1Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | S-Mini |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 17 pF @ 25 V |
Request a Quote
Clients Also Buy
SSM3K15AFU,LF
MOSFET N-CH 30V 100MA USM
TK6R7A10PL,S4X
X35 PB-F POWER MOSFET TRANSISTOR
TK6A53D(STA4,Q,M)
MOSFET N-CH 525V 6A TO220SIS
