SSM3K7002BF,LF
MOSFET N-CH 60V 200MA SC59Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage SSM3K7002BF-LF is an N-Channel MOSFET from the U-MOSIV series. This component features a 60V drain-source breakdown voltage and a continuous drain current capability of 200mA at 25°C. The device is housed in a TO-236-3, SC-59, SOT-23-3 package, suitable for surface mount applications. With a maximum on-resistance of 2.1 Ohms at 500mA and 10V Vgs, and a power dissipation of 200mW (Ta), it is engineered for efficient operation. Key electrical characteristics include a maximum input capacitance of 17pF at 25V. This MOSFET is utilized across various industries, including consumer electronics and industrial automation.
Additional Information
Series: U-MOSIVRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Rds On (Max) @ Id, Vgs | 2.1Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | SC-59 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 17 pF @ 25 V |
Request a Quote
Clients Also Buy
SSM3K318R,LF
MOSFET N-CH 60V 2.5A SOT23F
TK8S06K3L(T6L1,NQ)
MOSFET N-CH 60V 8A DPAK
SSM3K347R,LF
MOSFET N-CH 38V 2A SOT23F
