SSM3K36TU,LF
MOSFET N-CH 20V 500MA UFMManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage N-Channel MOSFET, SSM3K36TU-LF, is a 20V device designed for surface mount applications. This MOSFET boasts a continuous drain current of 500mA at 25°C and a maximum power dissipation of 800mW. Key electrical characteristics include a drain-to-source voltage (Vdss) of 20V, a low on-resistance (Rds On) of 630mOhm at 200mA and 5V gate-source voltage, and a gate charge (Qg) of 1.23 nC at 4V. The input capacitance (Ciss) is 46 pF maximum at 10V. Operating across a temperature range of -55°C to 150°C, it is supplied in a compact UFM package, presented on tape and reel. This component finds application in various industrial and consumer electronics sectors requiring efficient switching and power management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 500mA (Ta) |
| Rds On (Max) @ Id, Vgs | 630mOhm @ 200mA, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | UFM |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.23 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 46 pF @ 10 V |
Request a Quote
Clients Also Buy
SSM3K15AFU,LF
MOSFET N-CH 30V 100MA USM
TK6R7A10PL,S4X
X35 PB-F POWER MOSFET TRANSISTOR
TK6A53D(STA4,Q,M)
MOSFET N-CH 525V 6A TO220SIS
