SSM3K35MFV(TPL3)
MOSFET N-CH 20V 180MA VESMManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage N-Channel MOSFET, part of the *MOSVI series, is a 20V device designed for surface mount applications. The SSM3K35MFV-TPL3- features a continuous drain current of 180mA at 25°C and a maximum power dissipation of 150mW. Its Rds On is specified at 3Ohm maximum for an Id of 50mA and Vgs of 4V, with drive voltages ranging from 1.2V to 4V. Key parameters include an input capacitance of 9.5pF at 3V and a gate-source threshold voltage of 1V at 1mA. The device operates across a temperature range of -40°C to 150°C TJ. This component is suitable for use in portable electronics and power management applications. It is supplied in a VESM package as part of a Tape & Reel.
Additional Information
Series: À-MOSVIRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180mA (Ta) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 50mA, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 150mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | VESM |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9.5 pF @ 3 V |
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