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SSM3K329R,LF

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SSM3K329R,LF

MOSFET N CH 30V 3.5A 2-3Z1A

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Toshiba Semiconductor and Storage presents the SSM3K329R-LF, an N-Channel MOSFET from the U-MOSIII series. This component features a Drain to Source Voltage (Vdss) of 30V and supports a continuous drain current (Id) of 3.5A at 25°C. The Rds On is specified at a maximum of 126mOhm with an Id of 1A and Vgs of 4V, with drive voltages ranging from 1.8V to 4V. Input capacitance (Ciss) is a maximum of 123pF at 15V, and gate charge (Qg) is 1.5nC at 4V. The device operates within an ambient temperature range up to 150°C (TJ) and has a maximum power dissipation of 1W (Ta). Available in a SOT-23F surface mount package, this MOSFET is commonly utilized in power management and switching applications across various industrial sectors. It is supplied in Cut Tape (CT) packaging.

Additional Information

Series: U-MOSIIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ObsoletePackaging: Cut Tape (CT)Datasheet:
Technical Details:
PackagingCut Tape (CT)
Package / CaseSOT-23-3 Flat Leads
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.5A (Ta)
Rds On (Max) @ Id, Vgs126mOhm @ 1A, 4V
FET Feature-
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id1V @ 1mA
Supplier Device PackageSOT-23F
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs1.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds123 pF @ 15 V

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