SSM3K329R,LF
MOSFET N CH 30V 3.5A 2-3Z1AManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage presents the SSM3K329R-LF, an N-Channel MOSFET from the U-MOSIII series. This component features a Drain to Source Voltage (Vdss) of 30V and supports a continuous drain current (Id) of 3.5A at 25°C. The Rds On is specified at a maximum of 126mOhm with an Id of 1A and Vgs of 4V, with drive voltages ranging from 1.8V to 4V. Input capacitance (Ciss) is a maximum of 123pF at 15V, and gate charge (Qg) is 1.5nC at 4V. The device operates within an ambient temperature range up to 150°C (TJ) and has a maximum power dissipation of 1W (Ta). Available in a SOT-23F surface mount package, this MOSFET is commonly utilized in power management and switching applications across various industrial sectors. It is supplied in Cut Tape (CT) packaging.
Additional Information
Series: U-MOSIIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: Last Time BuyPackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | SOT-23-3 Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 126mOhm @ 1A, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | SOT-23F |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.5 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 123 pF @ 15 V |
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