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SSM3K316T(TE85L,F)

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SSM3K316T(TE85L,F)

MOSFET N-CH 30V 4A TSM

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Toshiba Semiconductor and Storage MOSFET N-Channel SSM3K316T-TE85L-F-. This N-Channel MOSFET features a 30V drain-source breakdown voltage and a continuous drain current of 4A at 25°C. With a maximum on-resistance of 53mOhm at 3A and 10V, this device is suitable for various power management applications. The TSM package (TO-236-3, SC-59, SOT-23-3) is designed for surface mounting and supports a maximum power dissipation of 700mW. Key parameters include a gate charge of 4.3 nC and input capacitance of 270 pF. Operating at temperatures up to 150°C, the SSM3K316T-TE85L-F- is utilized in consumer electronics and industrial automation. This component is supplied in tape and reel packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Rds On (Max) @ Id, Vgs53mOhm @ 3A, 10V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Vgs(th) (Max) @ Id1V @ 1mA
Supplier Device PackageTSM
Drive Voltage (Max Rds On, Min Rds On)1.8V, 10V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs4.3 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds270 pF @ 10 V

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