SSM3K316T(TE85L,F)
MOSFET N-CH 30V 4A TSMManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage MOSFET N-Channel SSM3K316T-TE85L-F-. This N-Channel MOSFET features a 30V drain-source breakdown voltage and a continuous drain current of 4A at 25°C. With a maximum on-resistance of 53mOhm at 3A and 10V, this device is suitable for various power management applications. The TSM package (TO-236-3, SC-59, SOT-23-3) is designed for surface mounting and supports a maximum power dissipation of 700mW. Key parameters include a gate charge of 4.3 nC and input capacitance of 270 pF. Operating at temperatures up to 150°C, the SSM3K316T-TE85L-F- is utilized in consumer electronics and industrial automation. This component is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 53mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | TSM |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.3 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 10 V |
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