SSM3K315T(TE85L,F)
MOSFET N-CH 30V 6A TSMManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage N-Channel MOSFET, part of the U-MOSIV series, the SSM3K315T-TE85L-F- is a 30V device with a continuous drain current capability of 6A at 25°C. This surface mount component, packaged in a TSM (TO-236-3, SC-59, SOT-23-3) format and supplied on tape and reel, features a maximum on-resistance of 27.6 mOhm at 4A and 10V Vgs. The gate charge is specified at 10.1 nC maximum at 10V Vgs, with input capacitance (Ciss) at 450 pF maximum at 15V Vds. Operating at temperatures up to 150°C, this MOSFET has a power dissipation of 700mW. It finds application in various industries including automotive and industrial power management.
Additional Information
Series: U-MOSIVRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 27.6mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TSM |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 15 V |
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