SSM3K310T(TE85L,F)
MOSFET N-CH 20V 5A TSMManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage N-Channel MOSFET, part number SSM3K310T-TE85L-F-, offers a 20V drain-source voltage and a continuous drain current of 5A at 25°C. This surface mount device features a maximum power dissipation of 700mW (Ta) and a low Rds(on) of 28mOhm at 4A and 4V. The gate threshold voltage is specified, and the device supports gate drive voltages from 1.5V to 4V. Key electrical characteristics include a maximum gate charge of 14.8 nC and an input capacitance of 1120 pF. Operating at temperatures up to 150°C, this component is suitable for applications in consumer electronics and industrial automation. It is supplied in a TSM package on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 4A, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TSM |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.8 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1120 pF @ 10 V |
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