SSM3K303T(TE85L,F)
MOSFET N-CH 30V 2.9A TSMManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage presents the SSM3K303T-TE85L-F-, an N-Channel MOSFET from the À-MOSVII series. This surface-mount device features a Drain-Source voltage (Vdss) of 30V and a continuous drain current (Id) of 2.9A at 25°C (Ta). With a maximum Rds On of 83mOhm at 1.5A and 10V Vgs, it offers efficient switching characteristics. The device supports gate drive voltages from 4V to 10V and has a typical input capacitance (Ciss) of 180pF at 10V Vds, with a gate charge (Qg) of 3.3nC at 4V Vgs. Its thermal performance includes a maximum power dissipation of 700mW (Ta) and an operational junction temperature up to 150°C. This component is supplied in a TSM package, specifically a TO-236-3, SC-59, SOT-23-3 configuration, on tape and reel. The SSM3K303T-TE85L-F- is utilized in applications such as power management and general-purpose switching within consumer electronics and industrial automation.
Additional Information
Series: À-MOSVIIRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 83mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | TSM |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.3 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 180 pF @ 10 V |
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