SSM3K302T(TE85L,F)
MOSFET N-CH 30V 3A TSMManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage SSM3K302T-TE85L-F- is an N-Channel MOSFET with a Drain-Source Voltage (Vdss) of 30V. This surface mount device, packaged in a TO-236-3, SC-59, SOT-23-3 (TSM), offers a continuous drain current (Id) of 3A at 25°C and a maximum power dissipation of 700mW. Key electrical characteristics include a maximum Rds On of 71mOhm at 2A and 4V, and a gate charge (Qg) of 4.3 nC at 4V. The input capacitance (Ciss) is a maximum of 270 pF at 10V. This component is suitable for applications requiring efficient switching and power management across various industries. It operates within a temperature range of 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 71mOhm @ 2A, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TSM |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.3 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 10 V |
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