SSM3K301T(TE85L,F)
MOSFET N-CH 20V 3.5A TSMManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage N-Channel MOSFET, part number SSM3K301T-TE85L-F-, is a 20V device with a continuous drain current of 3.5A at 25°C. This surface mount component, packaged in a TSM (TO-236-3, SC-59, SOT-23-3) format, offers a maximum on-resistance of 56mOhm at 2A and 4V Vgs. Key parameters include a gate charge of 4.8 nC and input capacitance of 320 pF at 10V. The device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 700mW. Drive voltages range from 1.8V to 4V. This MOSFET is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 2A, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TSM |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.8 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 320 pF @ 10 V |
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