SSM3K16CTC,L3F
MOSFET N-CH 20V 200MA CST3CManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
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Toshiba Semiconductor and Storage N-Channel MOSFET, part number SSM3K16CTC-L3F, is designed for applications requiring efficient switching. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 200mA at 25°C. The SSM3K16CTC-L3F offers a low on-resistance of 2.2 Ohms maximum at 100mA and 4.5V Vgs, with a gate threshold voltage of 1V maximum at 1mA. It operates with a maximum power dissipation of 500mW. The MOSFET is housed in a compact CST3C (SC-101, SOT-883) surface mount package, supplied on tape and reel. Typical applications include power management and signal switching in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 100mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | CST3C |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12 pF @ 10 V |
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