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SSM3K16CT(TPL3)

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SSM3K16CT(TPL3)

MOSFET N-CH 20V 100MA CST3

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Toshiba Semiconductor and Storage N-Channel MOSFET, part number SSM3K16CT-TPL3-, is a high-performance device within the Ï€-MOSVI series. This surface mount component offers a 20V drain-source breakdown voltage and a continuous drain current of 100mA at 25°C ambient temperature, with a maximum power dissipation of 100mW (Ta). Featuring a low on-resistance of 3Ohm at 10mA and 4V, this MOSFET is ideal for applications requiring efficient switching and low power loss. The CST3 package (SC-101, SOT-883) ensures compact integration into modern circuit designs. Key electrical characteristics include an input capacitance of 9.3 pF at 3V and a gate threshold voltage of 1.1V at 100µA. Operating at temperatures up to 150°C (TJ), this device is suited for use in consumer electronics, portable devices, and various low-power switching applications.

Additional Information

Series: π-MOSVIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-101, SOT-883
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C100mA (Ta)
Rds On (Max) @ Id, Vgs3Ohm @ 10mA, 4V
FET Feature-
Power Dissipation (Max)100mW (Ta)
Vgs(th) (Max) @ Id1.1V @ 100µA
Supplier Device PackageCST3
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds9.3 pF @ 3 V

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