SSM3K16CT(TPL3)
MOSFET N-CH 20V 100MA CST3Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage N-Channel MOSFET, part number SSM3K16CT-TPL3-, is a high-performance device within the À-MOSVI series. This surface mount component offers a 20V drain-source breakdown voltage and a continuous drain current of 100mA at 25°C ambient temperature, with a maximum power dissipation of 100mW (Ta). Featuring a low on-resistance of 3Ohm at 10mA and 4V, this MOSFET is ideal for applications requiring efficient switching and low power loss. The CST3 package (SC-101, SOT-883) ensures compact integration into modern circuit designs. Key electrical characteristics include an input capacitance of 9.3 pF at 3V and a gate threshold voltage of 1.1V at 100µA. Operating at temperatures up to 150°C (TJ), this device is suited for use in consumer electronics, portable devices, and various low-power switching applications.
Additional Information
Series: À-MOSVIRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 10mA, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 100mW (Ta) |
| Vgs(th) (Max) @ Id | 1.1V @ 100µA |
| Supplier Device Package | CST3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9.3 pF @ 3 V |
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