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SSM3K15FS,LF

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SSM3K15FS,LF

MOSFET N-CH 30V 100MA SSM

Manufacturer: Toshiba Semiconductor and Storage

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Toshiba Semiconductor and Storage's SSM3K15FS-LF is an N-Channel MOSFET designed for surface mount applications. This device from the Ï€-MOSVI series features a drain-to-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 100mA at 25°C. The SSM3K15FS-LF offers a maximum on-resistance (Rds On) of 4Ohm at 10mA and 4V gate-source voltage (Vgs). With a maximum power dissipation of 200mW (Ta) and an operating junction temperature of 150°C, it is suitable for various electronic systems. The input capacitance (Ciss) is a maximum of 7.8 pF at 3 V. This component is commonly utilized in portable electronics and general-purpose switching applications. The SSM3K15FS-LF is supplied in a Tape & Reel (TR) package, with the supplier device package designated as SSM, corresponding to the SC-75, SOT-416 package.

Additional Information

Series: π-MOSVIRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-75, SOT-416
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C100mA (Ta)
Rds On (Max) @ Id, Vgs4Ohm @ 10mA, 4V
FET Feature-
Power Dissipation (Max)200mW (Ta)
Vgs(th) (Max) @ Id1.5V @ 100µA
Supplier Device PackageSSM
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds7.8 pF @ 3 V

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