SSM3K15CT(TPL3)
MOSFET N-CH 30V 100MA CST3Manufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage's SSM3K15CT-TPL3- is an N-Channel MOSFET designed for surface-mount applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 100mA at 25°C. The CST3 package houses a device with a maximum power dissipation of 100mW (Ta). Key electrical characteristics include a maximum Rds On of 4 Ohms at 10mA and 4V Vgs, and an input capacitance (Ciss) of 7.8 pF at 3V. The gate threshold voltage (Vgs(th)) is specified at 1.5V maximum with 100µA drain current. This device operates within an ambient temperature range up to 150°C (TJ). The SSM3K15CT-TPL3- is frequently utilized in consumer electronics and portable devices where space-constrained designs and low-power operation are critical. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: À-MOSVIRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 10mA, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 100mW (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 100µA |
| Supplier Device Package | CST3 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7.8 pF @ 3 V |
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