SSM3K106TU(TE85L)
MOSFET N-CH 20V 1.2A UFMManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage SSM3K106TU-TE85L- is an N-Channel MOSFET from the À-MOSVI series. This device features a drain-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 1.2A at 25°C (Ta). The on-resistance (Rds On) is specified as a maximum of 310mOhm at 600mA and 10V Vgs. It offers a power dissipation of 500mW (Ta) and operates at junction temperatures up to 150°C. The input capacitance (Ciss) is 36 pF at 10V. This component is supplied in a 3-SMD, Flat Leads UFM package and is available on tape and reel. Applications include power management and signal switching in various consumer electronics and industrial systems.
Additional Information
Series: À-MOSVIRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 310mOhm @ 600mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 100µA |
| Supplier Device Package | UFM |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 36 pF @ 10 V |
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