SSM3K01T(TE85L,F)
MOSFET N-CH 30V 3.2A TSMManufacturer: Toshiba Semiconductor and Storage
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Toshiba Semiconductor and Storage's SSM3K01T-TE85L-F- is an N-Channel MOSFET from the µ-MOSVI series. This surface mount component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 3.2A at 25°C (Ta). The device offers a maximum on-resistance (Rds On) of 120mOhm at 1.6A and 4V gate-source voltage. It supports gate drive voltages from 2.5V to 4V and has a maximum gate-source voltage of ±10V. The power dissipation is rated at 1.25W (Ta), and it operates at junction temperatures up to 150°C. Key electrical characteristics include a maximum input capacitance (Ciss) of 152 pF at 10V. Packaged in a TSM (TO-236-3, SC-59, SOT-23-3) format, this device is supplied on tape and reel. Applications include power management and switching circuits across various industrial sectors.
Additional Information
Series: À-MOSVIRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 1.6A, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TSM |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 152 pF @ 10 V |
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